منابع مشابه
Drift-Mobility Measurements and Mobility Edges in Disordered Silicons
Published electron and hole drift-mobility measurements in hydrogenated amorphous silicon (a-Si:H), amorphous silicon alloys (a-SiGe:H and a-SiC:H), and microcrystalline silicon (μc-Si:H) are analysed in terms of the exponential bandtail trapping model. A three-parameter model was employed using an exponential bandtail width E , the band mobility μ0, and the attempt-toescape frequency ν. Low-te...
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ژورنال
عنوان ژورنال: III-Vs Review
سال: 2004
ISSN: 0961-1290
DOI: 10.1016/s0961-1290(04)00740-9